DLC FILM-FORMING EQUIPMENT Jointly developed by Industry,
University and Local Government
特許申請済み
Filed by Patent
Office
福岡県工業技術センターと大学の共同開発装置です
1バッチ内で試料を大気に触れることなく基板表面改質とDLC成膜ができる
今までにない手法の画期的な装置です。
炭素を含むイオンを電気的に中和し、高エネルギーを持った中性粒子と
して対象物に照射し、この中性粒子により成膜をします。
This Equipment has been developed by University and Industrial Technology
Center of Fukuoka Prefectural Government.
This Equipment is equipped with new and killer technology and can process
the surfacereforming of substrate and DLC film-forming in one batch,
without exposing the sample in atmosphere.
Ion containing carbon is electrically neutralized and exposed to sample
as
medium-efficiency particulate with high energy,which forms the film.
| wafer size | 6",4"and piece |
| tilting | 0〜90 |
| rotation | Max. 20rpm |
| cooling | Water cooling |
| process gas | Ar,O2,CH4 with controller |
| purge gas | N2 |
| titting and line | VCR and swagelock, EP grade |
| interlock | Substrate cooling , Ion source status , vacuum status |
| process control | Full auto. Control of hi-vac. And vent |
| Pneumatic substrate shutter control Manual ion gun control Manual process gas control |
|
| Manual substrate control ( angel, rotation ) |